代替部品
Price @ 1000
$ 0.304
$ 0.281
Stock
127,906
726,380
Authorized Distributors
3
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
SOT-23-3
Drain to Source Voltage (Vdss)
30 V
-30 V
Continuous Drain Current (ID)
2.5 A
2.5 A
Threshold Voltage
-
-3 V
Rds On Max
78 mΩ
78 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
750 mW
750 mW
Input Capacitance
380 pF
380 pF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-03
LTD Date2025-05-03
関連部品
VishaySI2307CDS-T1-GE3
Power MOSFET, P Channel, 30 V, 3.5 A, 88 MilliOhms, SOT-23 (TO-236), 3 Pins, Surface Mount
説明
Vishay SI2307BDS-T1-GE3の詳細は販売業者から提供されます。
Si2307BDS Series 30 V 2.5 A Surface Mount P-Channel Mosfet - SOT-23-3 (TO-236)
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
30V 2.5A 750mW 78m´Î@10V3.2A 3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:12ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
メーカーの別名
Vishayは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Vishay は以下の名前でも知られているかもしれません：
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- VSHAY
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- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
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- Vishay Semiconductor Diodes Division
- VISHAY OPTO
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技術仕様
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance380 pF
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation750 mW
Rds On Max78 mΩ
Rise Time12 ns
TerminationSMD/SMT
Turn-Off Delay Time25 ns
Turn-On Delay Time9 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm