価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STGW15S120DF3 | 0 | 600 | 7h | ||||||||
| Farnell | STGW15S120DF3 | 0 | 1 | 1d | ||||||||
| Microchip USA | STGW15S120DF3 | 342 | 600 | Tray | 21h | |||||||
| Component Stockers USA | STGW15S120DF3 | 12 | 19h | |||||||||
| Worldway Electronics | STGW15S120DF3 | 10,215 | 7 | Tube | 4h |
関連部品
説明
STMicroelectronics STGW15S120DF3の詳細は販売業者から提供されます。
Trans IGBT Chip N-CH 1200V 30A 259000mW 3-Pin(3+Tab) TO-247 Tube
Trench gate field-stop IGBT, S series 1200 V, 15 A low drop
STMICROELECTRONICS STGW15S120DF3 IGBT, SINGLE, 1.2KV, 30A, TO-247-3
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247
IGBT, SINGLE, 1.2KV, 30A, TO-247-3; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 259W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
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- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
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- WAFERSCALE
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- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.05 V
Collector Emitter Voltage (VCEO)1.2 kV
Max Collector Current30 A
Max Operating Temperature175 °C
Max Power Dissipation259 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time270 ns