価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRG4PH40KPBF | 0 | 4K | Bulk | 13h | |||||||
| Microchip USA | IRG4PH40K | 313 | 600 | Bag | 18h | |||||||
| Component Stockers USA | IRG4PH40KPBF | 11,428 | >1wk | |||||||||
| Win Source | WS-IRG4PH40K | 22,000 | 35 | 1d | ||||||||
| Worldway Electronics | IRG4PH40KPBF | 17,352 | 7 | Tube | 23h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-07-15
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2020-06-30
LTD Date2020-12-31
説明
Infineon IRG4PH40KPBFの詳細は販売業者から提供されます。
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
Infineon SCT
IRG4PH40K Series 1200 V 15 A Through Hole UltraFast IGBT - TO-247AC
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):3.4V; Power Dissipation, Pd:160W; Package/Case:TO-247AC ;RoHS Compliant: Yes
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.74V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40KPBF; Fall Time Max:230ns; Fall Time tf:230ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Pulsed Current Icm:60A; Rise Time:22ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage3.4 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current30 A
Current Rating30 A
Element ConfigurationSingle
Fall Time230 ns
Max Collector Current30 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity400
PackagingBulk
Power Dissipation160 W
Rise Time22 ns
Turn-Off Delay Time96 ns
Turn-On Delay Time50 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height20.701 mm
Length15.875 mm
Width5.3086 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント