代替部品
Price @ 1000
$ 2.746
$ 2.169
Stock
80,207
153,557
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
650 V
650 V
Continuous Drain Current (ID)
22 A
22 A
Threshold Voltage
-
-
Rds On Max
139 mΩ
148 mΩ
Gate to Source Voltage (Vgs)
25 V
25 V
Power Dissipation
30 W
30 W
Input Capacitance
2.88 nF
816 pF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
関連部品
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説明
STMicroelectronics STF30N65M5の詳細は販売業者から提供されます。
N-channel 650 V, 0.125 Ohm, 22 A, MDmesh(TM) V Power MOSFET TO-220FP
Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 22A I(D), 650V, 0.139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET 650V 0.139 OH
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance139 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.88 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max139 mΩ
Resistance139 MΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time50 ns
Turn-On Delay Time50 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm