関連部品
InfineonIPD65R1K4C6ATMA1
MOSFET N-CH 650V 3.2A TO252-3 N-Channel 650 V 3.2A (Tc) 28W (Tc) Surface Mount PG-TO252-3
説明
STMicroelectronics STDLED625Hの詳細は販売業者から提供されます。
N-channel 620 V, 1.7 Ohm typ., 4.5 A Power MOSFET in DPAK package
Trans MOSFET N-CH 620V 4.5A 3-Pin DPAK T/R
Power Field-Effect Transistor, 4.5A I(D), 620V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
70W(Tc) 30V 4.5V@ 50µA 23nC@ 10 V 1individualNChannel 620V 2Ω@ 1.9A,10V 4.5A 560pF@50V TO-252 SMD mount
メーカーの別名
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vds)620 V
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance560 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape (CT)
Rds On Max2 Ω
Rise Time9 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time10 ns