価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQD6N60CTM | 553 | 330 | |||||||||
| Rochester Electronics | FQD6N60CTM | 870 | 9h | |||||||||
| Component Stockers USA | FQD6N60CTM | 912 | 23h | |||||||||
| Win Source | WS-FQD6N60CTM | 8,128 | 90 | 10h | ||||||||
| Worldway Electronics | FQD6N60CTM | 7,121 | 7 | Tape & Reel | 9h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-14
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
説明
onsemi FQD6N60CTMの詳細は販売業者から提供されます。
600V N-Channel MOSFET | MOSFET N-CH 600V 4A DPAK
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs N-CH/600V/6A/ QFET C-Series
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)4 A
Drain to Source Resistance2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance810 pF
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max2 Ω
Rise Time45 ns
Turn-Off Delay Time45 ns