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説明
STMicroelectronics STAC4932Bの詳細は販売業者から提供されます。
TRANSISTOR RF MOSF N-CH STAC244B / RF Mosfet 100 V 500 mA 123MHz 26dB 1000W STAC244B
1200W Pulse - 100V HF/VHF DMOS TRANSISTOR in STAC package
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MOSFET,N CH,RF,1000W,250MHZ,STAC244B; Drain Source Voltage Vds: 200V; Continuous Drain Current Id: 10A; Power Dissipation Pd: 1.2kW; Operating Frequency Min: -; Operating Frequency Max: 250MHz; RF Transistor Case: STAC244B; No
メーカーの別名
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Body MaterialCeramic
MountScrew
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)1 mA
Drain to Source Voltage (Vdss)200 V
Frequency123 MHz
Gain26 dB
Gate to Source Voltage (Vgs)20 V
Max Frequency250 MHz
Max Operating Temperature200 °C
Max Power Dissipation1.2 kW
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage100 V
Output Power1 kW
Power Gain26 dB
Test Current500 mA
Test Voltage100 V
Voltage Rating200 V