NXP Semiconductors MRFE6VP100HR5の詳細は販売業者から提供されます。
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
RF Power Field-Effect Transistor, 2-Element, L Band, N-Channel, Metal-oxide Semiconductor FET
MRFE6VP100H Series 50 V 512 MHz Broadband RF Power LDMOS Transistor - NI-780-4
Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 4-Pin NI-780 T/R
Avnet Japan
Trans RF MOSFET N-CH 133V 5-Pin Case 465M-01 T/R
RF FET Transistor, 133 VDC, 1.8 MHz, 2000 MHz, NI-780
DIODE GEN PURP 600V 30A TO220AC
RF MOSFET Transistors VHV6 100W 50V ISM
TRANSISTOR, RF, 133V, NI-780H-4L; Drain Source Voltage Vds: 133VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 1.8MHz; Operating Frequency Max: 2000MHz; RF Transistor Case: NI-780; No. of Pins: 4Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: -; SVHC: No SVHC (15-Jan-2019)