サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-01-18
Lifecycle StatusObsolete (Last Updated: 1 month ago)
関連部品
STMicroelectronicsSTE140NF20D
N-channel 200 V, 10 mOhm typ., 140 A STripFET(TM) II Power MOSFET (with fast diode) in an ISOTOP package
NXP SemiconductorsMRFE6VP100HR5
RF Power Transistor,1.8 to 2000 MHz, 100 W, Typ Gain in dB is 27.2 @ 512 MHz, 50 V, LDMOS, SOT1827
NXP SemiconductorsMRFE6VS25LR5
RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.9 @ 512 MHz, 50 V, LDMOS, SOT1791
説明
STMicroelectronics STAC4933の詳細は販売業者から提供されます。
300W - 50V High Ruggedness HF/VHF DMOS in STAC177 package
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TO220FP 300W 30MHZ 50V RF DMOS
MOSF RF N CH 200V 40A STAC177B
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Body MaterialCeramic
MountScrew
Number of Pins5
Number of Terminals4
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage200 V
Drain to Source Voltage (Vdss)200 V
Frequency30 MHz
Gain20 dB
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature200 °C
Max Power Dissipation795 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power300 W
PackagingBox
Test Current250 mA
Test Voltage50 V
Voltage Rating200 V