Semikron SKM100GB123D
$ 136.77
説明
Semikron SKM100GB123Dの詳細は販売業者から提供されます。
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
IGBT Module; Transistor Type:IGBT; Continuous Collector Current, Ic:100A; Collector Emitter Saturation Voltage, Vce(sat):2.5V; Package/Case:D61; C-E Breakdown Voltage:1200V; Collector Emitter Voltage, V(br)ceo:1.4V ;RoHS Compliant: Yes
not recommended for new design Features: MOS input (voltage controlled) N channel, Homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (10 mm) and creepage distances (20 mm) Typical Applications: AC inverter drives UPS
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