サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-03-31
LTD Date2024-09-30
関連部品
InfineonFD150R12RT4HOSA1
INFINEON FD150R12RT4 IGBT Array & Module Transistor, N Channel, 150 A, 1.75 V, 790 W, 1.2 kV
説明
Infineon FF150R12RT4HOSA1の詳細は販売業者から提供されます。
FF150R12RT4 Series 1200 V 150 A 790 W Surface Mount IGBT Module
Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:N Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes |Infineon FF150R12RT4HOSA1
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
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- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageModule
MountScrew
Number of Pins7
Number of Terminals5
Technical
Collector Emitter Saturation Voltage2.15 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current150 A
Element ConfigurationDual
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation790 W
Min Operating Temperature-40 °C
Number of Elements2
Package Quantity10
Power Dissipation790 W
Turn-Off Delay Time300 ns
Turn-On Delay Time130 ns
Dimensions
Height30.5 mm