サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-24
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2009-03-01
LTD Date2009-09-01
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説明
Rochester Electronics SPP80N06S209の詳細は販売業者から提供されます。
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB
190W(Tc) 20V 4V@ 125¦ÌA 80nC@ 10 V 1N 55V 9.1m¦¸@ 50A,10V 80A 3.14nF@25V TO-220 10mm*4.4mm*15.65mm
SPP80N06 - OPTIMOS, 80A, 55V, 0.0091OHM,;
メーカーの別名
Rochester Electronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Rochester Electronics は以下の名前でも知られているかもしれません：
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Resistance9.1 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.14 nF
Max Operating Temperature175 °C
Max Power Dissipation190 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max9.1 mΩ
Voltage Rating (DC)55 V