価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDP3205 | 1,240 | 216 | |||||||||
| Rochester Electronics | FDP3205 | 2,140 | 14h | |||||||||
| Microchip USA | FDP3205 | 344 | 300 | Tube | 7h | |||||||
| Win Source | WS-FDP3205 | 5,000 | 35 | 15h | ||||||||
| Worldway Electronics | FDP3205 | 27,951 | 7 | Tube | 14h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
InfineonIPP80N06S207AKSA4
55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHS
説明
onsemi FDP3205の詳細は販売業者から提供されます。
Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-220AB Rail
MOSFET N-CH 55V 100A TO-220
Power Field-Effect Transistor, 100A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 55V 100A TO220-3
RAIL / N-CH/55V 100A High Qg PT3
Field Effect Tube (MOSFET)
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.73 nF
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation150 W
Rds On Max7.5 mΩ
Rise Time147 ns
Turn-Off Delay Time42 ns