サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-03-31
LTD Date2024-09-30
関連部品
InfineonFD150R12RT4HOSA1
INFINEON FD150R12RT4 IGBT Array & Module Transistor, N Channel, 150 A, 1.75 V, 790 W, 1.2 kV
説明
Rochester Electronics DF150R12RT4HOSA1の詳細は販売業者から提供されます。
Trans IGBT Module N-CH 1200V 150A 790W 7-Pin 34MM-1 Tray
Our well-known 34 mm 1200V chopper IGBT modules are the right choice for your design, AG-34MM-1, RoHS
Infineon SCT
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel
Our well-known 34 mm 1200V chopper IGBT modules are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
メーカーの別名
Rochester Electronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Rochester Electronics は以下の名前でも知られているかもしれません：
- Rochester Electronics LLC
- ROCHESTER
- ROCHESTER ELECTRONIC
- ROCHESTER ELECTRONICS INC
- ONSEMI (VIA ROCHESTER)
- Rochester Electron
- ROCHESTER(REI)
- ROCHESTER INSTRUMENT
- REI
- Triscend Corp
- NFROCHESTER
- ROCHESTER ELECT INC
- Rochester(Intersil)
- Rochester Elec
技術仕様
Physical
Case/PackageModule
MountScrew
Number of Pins5
Number of Terminals4
Technical
Collector Emitter Saturation Voltage2.15 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Max Collector Current150 A
Max Operating Temperature175 °C
Max Power Dissipation790 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity10
Power Dissipation790 W
コンプライアンス
環境分類
China RoHSCompliant
Halogen FreeNot Halogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
準拠ステートメント