サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2005-10-31
LTD Date2006-05-01
関連部品
onsemiIRFW740BTM
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
onsemiFQB11N40TM
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.4A Tc 11.4A 3.13W 60ns
VishayIRFZ14SPBF
3.7W(Ta),43W(Tc) 20V 4V@ 250¦ÌA 11nC@ 10 V 1N 60V 200m¦¸@ 6A,10V 10A 300pF@25V D2PAK
VishayIRLZ14STRLPBF
3.7W(Ta),43W(Tc) 10V 2V@ 250¦ÌA 8.4nC@ 5 V 1N 60V 200m¦¸@ 6A,5V 10A 400pF@25V D2PAK,TO-263
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageD2PAK
Number of Terminals2
Technical
Continuous Drain Current (ID)9.7 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance280 mΩ
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Max Operating Temperature175 °C
Max Power Dissipation49 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Resistance280 mΩ
Rise Time21 ns
Turn-Off Delay Time29 ns