onsemi IRFW740BTM
$ 0.407
Obsolete
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
onsemiIRFW840BTM
Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
説明
onsemi IRFW740BTMの詳細は販売業者から提供されます。
Power Field-Effect Transistor, 10A I(D), 400V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
N-CH/400V/10A/0.55OHM/SUBSTITUTE OF IRFW740ATM
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageD2PAK
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance540 mΩ
Element ConfigurationSingle
Fall Time85 ns
Gate to Source Voltage (Vgs)30 V
Max Operating Temperature150 °C
Max Power Dissipation134 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rise Time80 ns
Turn-Off Delay Time125 ns