onsemi MUN2232T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Trans Digital BJT NPN 50V 100mA 338mW 3-Pin SC-59 T/R

NPN Bipolar Digital Transistor (BRT)

MUN2232T1 Series 50 V 100 mA NPN Silicon Surface Mount Transistor - SC-59-3

MUN2232T1G NPN DIGITAL TRANSISTOR, 100 MA 50 V 4.7 KOHM, RATIO OF 1, 3-PIN SC-59

ON SEMICONDUCTOR - MUN2232T1G - BRT TRANSISTOR, 50V, 4.7K/4.7KOHM, SC-59, FULL REEL

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

TRANS, AEC-Q101, PNP, -50V, -0.1A, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.