価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN2212T1G | 30,000 | 42K | 18h | ||||||||
| Newark | MUN2212T1G | 3,990 | 5 | Cut Tape | ||||||||
| Verical | MUN2212T1G | 62,600 | 18988 | |||||||||
| Rochester Electronics | MUN2212T1G | 71,600 | 16h | |||||||||
| DigiKey | MUN2212T1GOSCT-ND | 4,987 | 1 | Cut Tape |
CADモデル
製造元 onsemi MUN2212T1G のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 EE Concierge | シンボルフットプリント | ||
 Ultra Librarian | シンボルフットプリント | ダウンロード |
CADモデルをダウンロードする際に、パートナーサイトが新しいタブで開きます。
OctopartからCADモデルをダウンロードすることにより、お客様は弊社の利用規約とプライバシーポリシーに同意したものとみなされます。
代替部品
Price @ 1000
$ 0.041
$ 0.055
$ 0.055
Stock
1,448,828
292,488
292,488
Authorized Distributors
6
2
2
Mount
-
Surface Mount
Surface Mount
Case/Package
SC
TO-236-3
TO-236-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
-
-
hFE Min
60
60
60
Power Dissipation
338 mW
230 mW
230 mW
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
関連部品
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ROHMDTC143ZUAT106
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
説明
onsemi MUN2212T1Gの詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 22kO
NPN Bipolar Digital Transistor (BRT)
MUN2212T1G NPN DIGITAL TRANSISTOR, 100 MA 50 V 22 KOHMS, RATIO OF 1, 3-PIN SC-59
Brt Transistor, 50V, 22K/22Kohm, Sc-59-3; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm; Product Range:- Rohs Compliant: Yes |Onsemi MUN2212T1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSC
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min60
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation338 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation338 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height1.09 mm
Length2.9 mm
Width1.5 mm
コンプライアンス
環境分類
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント