onsemi MMUN2113LT1G

Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 47 kohm, 47 kohm

Bipolar Transistors (BJT); MMUN2113LT1G; ON SEMICONDUCTOR; PNP; 3; 50 V; 100 mA

MMUN Series 50 V 100 mA 47 kOhm PNP Silicon Bias Resistor Transistor - SOT-23-3

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

MMUN2113LT1G PNP DIGI TRANSISTOR, 100MA 50 V 47 KOHM, RATIO OF 1, 3-PIN SOT-23

Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-23 T/R

100 mA 50 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

onsemi PNPdigital transistor, SOT-23encapsulation, SMD mount, Maximum DC collector current-100 mA, maximum collector-emission voltage-50 V

Brt Transistor, 50Vdc, 47K/47K, Sot-23; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:47Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2113LT1G.

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.