onsemi MMUN2112LT1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

MMUN2112LT1G PNP DIGI TRANSISTOR, 100MA 50 V 21 KOHM, RATIO OF 1, 3-PIN SOT-23

PNP Bipolar Digital Transistor (BRT)

Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R

PNP - Pre-Biased 246mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS

Transistors Switching - Resistor Biased 100mA 50V BRT PNP

TRANSISTOR, RF, PNP, 50V, SOT-23-3; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor Case:SOT-23; No. of Pins:3 Pin; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); No. of Pins:3Pins

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.