onsemi MMUN2111LT1G

Bipolar Pre-Biased / Digital Transistor, BRT, Single PNP, 50 V, 100 mA, 10 kohm, 10 kohm

Transistor: PNP; bipolar; BRT; 50V; 0.1A; 246mW; SOT23; R1: 10k¦¸

Bipolar Transistors (BJT); MMUN2111LT1G; ON SEMICONDUCTOR; PNP; 3; 50 V; 100 mA

R1 = 10 KILO OHM, R2 = 10 KILO OHM PNP DIGITAL TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

MMUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-23

35@5mA,10V One PNP - Pre-Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS

PNP Bipolar Digital Transistor (BRT)

Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R

Pre Biased Triodes PNP Ic=100mA Vceo=50V hfe=35 P=400mW SOT23

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

TRANSISTOR, PNP, DIGITAL,-50V SOT-23; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm;

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.