onsemi MJE5731AGの詳細は販売業者から提供されます。
Bipolar (BJT) Single Transistor, PNP, 375 V, 1 A, 2 W, TO-220, Through Hole
MJE Series 350 V 1 A PNP Silicon Plastic Power Transistor TO-220AB
ON SEMICONDUCTOR - MJE5731AG - Bipolar (BJT) Single Transistor, PNP, 375 V, 10 MHz, 2 W, 1 A, 10 hFE
Power Bipolar Transistor, 1A I(C), 375V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
PNP BJT Power Transistor, 375V, 1A, 40W, TO-220
Trans GP BJT PNP 375V 1A 40000mW 3-Pin(3+Tab) TO-220AB Tube
Bipolar Transistors - BJT BIP PNP 1A 375V
375V 40W 1A 30@300mA10V 10MHz PNP 1V@1A200mA -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
1 A 375 V PNP Si POWER TRANSISTOR TO-220AB
onsemi PNPTransistor, TO-220encapsulation, Through hole mounting, Maximum DC collector current-3 A, maximum collector-emission voltage-350 V
TRANSISTOR, PNP, TO-220; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 375V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 2W; DC Collector Current: 1A; DC Current Gain hFE: 10hFE; Transistor Case Style