onsemi KSB834YTU
$ 0.493
Obsolete
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-11
LTD Date2010-06-11
説明
onsemi KSB834YTUの詳細は販売業者から提供されます。
Tube Through Hole PNP KSB834 Bipolar (BJT) Transistor 100 @ 500mA 5V 3A 1.5W 9MHz
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT PNP Epitaxial Sil
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Voltage (VCEO)60 V
Current Rating-3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-7 V
Frequency9 MHz
Gain Bandwidth Product9 MHz
hFE Min100
Max Collector Current3 A
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingRail/Tube
PolarityPNP
Power Dissipation1.5 W
Transition Frequency9 MHz
Voltage Rating (DC)-60 V