価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | HUF75344P3 | 433 | 1h | |||||||||
| DigiKey | HUF75344P3FS-ND | 527 | 1 | Tube | ||||||||
| Newark | HUF75344P3 | 0 | 150 | |||||||||
| Onlinecomponents.com | HUF75344P3 | 0 | 200 | Bulk | ||||||||
| Master Electronics | HUF75344P3 | 0 | 200 |
CADモデル
製造元 onsemi HUF75344P3 のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 SnapEDA | シンボルフットプリント | 3D | ダウンロード |
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代替部品
Price @ 1000
$ 1.47
$ 0.697
$ 0.697
Stock
195,570
3,067,567
3,067,567
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
-
4 V
4 V
Rds On Max
8 mΩ
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
285 W
150 W
150 W
Input Capacitance
3.2 nF
3.247 nF
3.247 nF
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-01-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
関連部品
説明
onsemi HUF75344P3の詳細は販売業者から提供されます。
N-Channel UltraFET® Power MOSFET 55V, 75A, 8mΩ
Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail
75 A 55 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.2 nF
Max Operating Temperature175 °C
Max Power Dissipation285 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation285 W
Rds On Max8 mΩ
Rise Time125 ns
Schedule B8541290080
Turn-Off Delay Time46 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)55 V
Dimensions
Height16.3 mm
Length10.67 mm
Width4.7 mm
コンプライアンス
環境分類
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
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