サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2009-06-23
LTD Date2009-12-23
関連部品
VishayIRF620STRLPBF
3W(Ta) 50W(Tc) 20V 4V@250µA 14nC@10V N-Ch MOSFET 200V 800mΩ@3.1A,10V 5.2A 260pF@25V D2PAK SMD
説明
onsemi FQB4N20TMの詳細は販売業者から提供されます。
Trans MOSFET N-CH 200V 3.6A 3-Pin(2+Tab) D2PAK T/R
3.13W(Ta)，45W(Tc) 5V@ 250µA 6.5nC@ 10V 1individualNChannel 200V 1.4Ω@ 1.8A,10V 220pF@25V D2PAK SMD mount
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)3.6 A
Current Rating3.6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance220 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max1.4 Ω
Rise Time50 ns
Turn-Off Delay Time7 ns
Voltage Rating (DC)200 V