onsemi FQB8N25TM
$ 0.703
Obsolete
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-13
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
説明
onsemi FQB8N25TMの詳細は販売業者から提供されます。
3.13W(Ta),87W(Tc) 5V@ 250¦ÌA 15nC@ 10V 1N 250V 550m¦¸@ 4A,10V 530pF@25V D2PAK
Trans MOSFET N-CH 250V 8A 3-Pin(2+Tab) D2PAK T/R
MOSFET N-CH 250V 8A D2PAK
Power Field-Effect Transistor, 8A I(D), 250V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MOSFETs 250V N-Channel QFET
MISCELLANEOUS MOSFETS;
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance530 pF
Max Operating Temperature150 °C
Max Power Dissipation87 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rds On Max550 mΩ
Rise Time95 ns
Turn-Off Delay Time11 ns
Voltage Rating (DC)250 V