onsemi FGA50N100BNTD2

Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
Obsolete
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IHS

Datasheet9ページ12年前
Datasheet0ページ0年前

onsemi

Factory Futures

Fairchild Semiconductor

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サプライチェーン

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-03-12
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-07-29
LTD Date2022-01-29
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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説明

onsemi FGA50N100BNTD2の詳細は販売業者から提供されます。

Trans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail
Avnet
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel
IHS
IGBT, SINGLE, 1KV, 50A, TO-3P; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1kV; Transistor Case Style: TO-3P; No. of Pins: 3Pin
Farnell
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
Fairchild Semiconductor

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element14 APAC
UTSource
South Microelectronics

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