MOSFET, PP CH, 20V, 3A, MICROFET2X2; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.