onsemi FDFMA2P859T

-20V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
$ 0.263
Obsolete

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データシート & ドキュメント

onsemi FDFMA2P859Tのデータシートとメーカー資料をダウンロードする。

IHS

Datasheet8ページ17年前
Datasheet0ページ0年前

onsemi

Newark

Fairchild Semiconductor

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サプライチェーン

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-08-12
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2013-09-11
LTD Date2014-03-11

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説明

onsemi FDFMA2P859Tの詳細は販売業者から提供されます。

-20V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
Trans MOSFET P-CH 20V 3A 6-Pin MicroFET EP T/R
P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount MicroFET 2x2 Thin
Power Field-Effect Transistor, 3A I(D), 20V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
1.4W(Ta) 1.3V@ 250µA 6nC@ 4.5V 1individualPChannel 20V 120mΩ@ 3A,4.5V 435pF@10V MICROFET SMD mount
Transistor Array; Transistor Polarity:P Channel + Schottky Diode; Continuous Drain Current Id:-3A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-700mV ;RoHS Compliant: Yes
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses.The MicroFET 2x2 Thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

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