価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDI038AN06A0 | 887 | 124 | |||||||||
| Avnet | FDI038AN06A0 | 2,400 | 336 | 2d | ||||||||
| Rochester Electronics | FDI038AN06A0 | 2,609 | 19h | |||||||||
| Flip Electronics | FDI038AN06A0 | 2,400 | >1wk | |||||||||
| Farnell | FDI038AN06A0 | 0 | 800 | Tube | 18h |
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-07-30
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-04-01
LTD Date2022-10-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
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説明
onsemi FDI038AN06A0の詳細は販売業者から提供されます。
PowerTrench® MOSFET, N-Channel, 60V, 80A, 3.8mΩ
Single N-Channel 60 V 0.0078 Ohm 124 nC 310 W Through Hole Mosfet TO-262
TO262, SINGLE, NCH, 60V, 0.0038 ohm PowerTrench MOSFET
Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB
Mosfet, N-Ch, 60V, 80A, I2Pak; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. Of Pins:3Pinsrohs Compliant: Yes |Onsemi FDI038AN06A0
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)17 A
Current Rating80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.4 nF
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation310 W
Rds On Max3.8 mΩ
Rise Time144 ns
Turn-Off Delay Time34 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)60 V