サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-01-31
LTD Date2011-07-31
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Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
説明
Infineon IPI100N06S3L-03の詳細は販売業者から提供されます。
Trans MOSFET N-CH 55V 100A Automotive 3-Pin(3+Tab) TO-262
Power Field-Effect Transistor, 100A I(D), 55V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET N-CH 55V 100A TO262-3
メーカーの別名
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Current Rating100 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance26.24 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max3 mΩ
Rise Time70 ns
Turn-Off Delay Time110 ns
Voltage Rating (DC)55 V