サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-04-13
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2018-06-22
LTD Date2018-12-22
関連部品
InfineonIPI040N06N3GXKSA1
MOSFET N-CH 60V 90A TO262-3 N-Channel 60 V 90A (Tc) 188W (Tc) Through Hole PG-TO262-3
InfineonIPI90N06S4L04AKSA2
MOSFET N-CH 60V 90A TO262-3 / N-Channel 60 V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3-1
説明
STMicroelectronics STFI260N6F6の詳細は販売業者から提供されます。
N-channel 60 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAKFP package
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) I2PAKFP Tube
MOSFET N-CH 60V 80A I2PAKFP / High avalanche ruggedness
メーカーの別名
STMicroelectronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 STMicroelectronics は以下の名前でも知られているかもしれません：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.240009 g
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance1.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time62.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.4 nF
Max Operating Temperature175 °C
Max Power Dissipation41.7 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max3 mΩ
Rise Time165 ns
Turn-Off Delay Time144.4 ns
Turn-On Delay Time31.4 ns