onsemi FCP36N60N

N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 36 A, 90 mΩ, TO-220

Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 600V 36A TO-220-3

Power Field-Effect Transistor, 36A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET,N CH,600V,36A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.081ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:312W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.