サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-10-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-30
LTD Date2014-12-31
関連部品
NXP SemiconductorsPSMN010-25YLC,115
Power Field-Effect Transistor, 39A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRF7807ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 11 Milliohms;ID 11A;SO-8;PD 2.5W;VGS +/-20V
説明
NXP Semiconductors PSMN012-25YLC,115の詳細は販売業者から提供されます。
Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology
Trans MOSFET N-CH 25V 33A 5-Pin(4+Tab) LFPAK T/R
Compliant Surface Mount 5.6 ns Lead Free Digi-Reel® 9.4 ns 12.6 mΩ SO
メーカーの別名
NXP Semiconductorsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NXP Semiconductors は以下の名前でも知られているかもしれません：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技術仕様
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins5
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance12.6 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time5.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance528 pF
Max Operating Temperature175 °C
Max Power Dissipation26 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation26 W
Rds On Max12.6 mΩ
Rise Time9.4 ns
Turn-Off Delay Time14.4 ns
Turn-On Delay Time11.7 ns