サプライチェーン
Projected EOL Date2044-04-30
Country of AssemblyPhilippines
Country of FabricationJapan, Taiwan, United States of America
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.0095
Lifecycle StatusProduction (Last Updated: 1 day ago)
Manufacturer Lifecycle StatusREL (Last Updated: 1 day ago)
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IGBT 1000V 60A 180W TO264 / Trans IGBT Chip N-CH 1000V 60A 180000mW 3-Pin(3+Tab) TO-264 Tube
説明
Microchip APT80GA60LD40の詳細は販売業者から提供されます。
Trans IGBT Chip N-CH 600V 143A 625000mW 3-Pin(3+Tab) TO-264 Tube
IGBT 600V 143A 625W TO264 / IGBT PT 600 V 143 A 625 W Through Hole TO-264
IGBT PT MOS 8 Combi 600 V 80 A TO-264
Insulated Gate Bipolar Transistor - Power MOS 8
メーカーの別名
Microchipは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Microchip は以下の名前でも知られているかもしれません：
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- MICROCIHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
技術仕様
Physical
Case/PackageTO-264
MountThrough Hole
Number of Pins3
Weight10.6 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current143 A
Element ConfigurationSingle
HS Code8541.29.0055, 8541.29.0095
Max Collector Current143 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 W
Min Operating Temperature-55 °C
Power Dissipation625 W
Reverse Recovery Time22 ns
Schedule B8541290080
Turn-Off Delay Time158 ns
Turn-On Delay Time23 ns
Dimensions
Height29.18 mm
Length26.49 mm
Width20.5 mm