代替部品
Price @ 1000
$ 0.793
Stock
111,884
489,852
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-252
TO-252-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
6 A
6 A
Threshold Voltage
-
-
Rds On Max
900 mΩ
900 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
83 W
83 W
Input Capacitance
785 pF
785 pF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-02-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-15
LTD Date2017-05-15
関連部品
InfineonSPD08N50C3ATMA1
Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 7.6A DPAK
説明
Infineon SPD06N80C3BTMA1の詳細は販売業者から提供されます。
Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-252
Contact PlatingTin
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)6 A
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)800 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance785 pF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance900 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation83 W
Rds On Max900 mΩ
Rise Time15 ns
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns