価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SPD06N80C3ATMA1 | 667 | 5 | Cut Tape | ||||||||
| Arrow Electronics | SPD06N80C3ATMA1 | 798 | 1 | |||||||||
| Future Electronics | SPD06N80C3ATMA1 | 2,500 | 2500 | Tape & Reel | ||||||||
| Rochester Electronics | SPD06N80C3ATMA1 | 14,161 | 22h | |||||||||
| DigiKey | SPD06N80C3ATMA1CT-ND | 5,872 | 1 | Cut Tape |
CADモデル
製造元 Infineon SPD06N80C3ATMA1 のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 EE Concierge | シンボルフットプリント |
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サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-02-27
Lifecycle StatusNRND (Last Updated: 4 months ago)
関連部品
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78W(Tc) 30V 4V@ 250¦ÌA 34nC@ 10 V 1N 620V 900m¦¸@ 3A,10V 6A 578pF@100V TO-252AA 2.38mm
STMicroelectronicsSTD11N65M2
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
説明
Infineon SPD06N80C3ATMA1の詳細は販売業者から提供されます。
Power MOSFET, N Channel, 800 V, 6 A, 0.78 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6A; Package / Case:TO-252; Power Dissipation Pd:83W; Pulse Current Idm:18A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) mOhm = 900 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 83
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6 A
Current Rating6 A
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)800 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance785 pF
Max Dual Supply Voltage800 V
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance900 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation83 W
Rds On Max900 mΩ
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time72 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)800 V