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製造元 Infineon IRLML6401TRPBF のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
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代替部品
Price @ 1000
$ 0.141
$ 0.044
Stock
30,357,460
293,395
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
TO-236-3
Drain to Source Voltage (Vdss)
-12 V
-12 V
Continuous Drain Current (ID)
4.3 A
4.3 A
Threshold Voltage
-550 mV
-550 mV
Rds On Max
50 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
8 V
8 V
Power Dissipation
1.3 W
1.3 W
Input Capacitance
830 pF
830 pF
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-09-01
Lifecycle StatusEOL (Last Updated: 4 months ago)
LTB Date2026-06-30
LTD Date2027-12-31
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InfineonIRLML6344TRPBF
Transistor: N-MOSFET; unipolar; 30V; 5A; 29ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML6402TRPBF
Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML2502TRPBF
Transistor: N-MOSFET; unipolar; 12V; 4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
説明
Infineon IRLML6401TRPBFの詳細は販売業者から提供されます。
Transistor: P-MOSFET; unipolar; -12V; -4.3A; 0.05ohm; 1.3W; -55+150 deg.C; SMD; SOT23
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 0.05Ohm;ID -4.3A;Micro3;PD 1.3W;VGS +/-8V
-12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 12 V, 4.3 A, 0.05 ohm, SOT-23, Surface Mount
Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R / HEXFET Power MOSFET
Single P-Channel 12 V 0.05 Ohm 10 nC SMT HEXFET® Power Mosfet - MICRO-3
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
Mosfet, P Channel, -12V, -4.3A, Sot-23-3, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:4.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Power Dissipation:1.3W Rohs Compliant: Yes |Infineon Technologies IRLML6401TRPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:4.3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:-4.5V; Voltage, Vgs th Typ:-0.55V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:34A; Power Dissipation:1.3W; Power, Pd:1.3W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 10V:0.05ohm; Thermal Resistance, Junction to Case A:100°C/W; Voltage, Vds Max:12V; Voltage, Vgs th Min:-0.4V; Width, Tape:8mm
MOSFET, P, MICRO3; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-550mV; Power Dissipation Pd:1.3W; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.3A; Package / Case:Micro3; Power Dissipation Pd:1.3W; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-550mV; Voltage Vgs Rds on Measurement:-4.5V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.3 A
Current Rating-4.3 A
Drain to Source Breakdown Voltage-12 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)-12 V
Dual Supply Voltage-12 V
Element ConfigurationSingle
Fall Time210 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance830 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage12 V
Min Operating Temperature-55 °C
Nominal Vgs-550 mV
Number of Channels1
Number of Elements1
On-State Resistance50 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time32 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-550 mV
Turn-Off Delay Time250 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)-12 V
Dimensions
Height1.12 mm
Length3.0226 mm
Width1.397 mm