Infineon IRLML6344TRPBF

Transistor: N-MOSFET; unipolar; 30V; 5A; 29ohm; 1.3W; -55+150 deg.C; SMD; SOT23

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Power MOSFET, N Channel, 30 V, 5 A, 29 mOhm, SOT-23, 3 Pins, Surface Mount

Single N-Channel 30 V 37 mOhm 6.8 nC HEXFET® Power Mosfet - SOT-23

Trans MOSFET N-CH 30V 5A 3-Pin SOT-23 T/R

30V 5A 29m´Î@4.5V5A 1.3W 1.1V@10Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

N CH MOSFET, 30V, 5A, 3-SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; No. of Pins:3 ;RoHS Compliant: Yes

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

N-channel power MOSFET, 30V drain-source voltage, 5A continuous drain current, and 37mΩ maximum drain-source on-resistance. Features include a 1.02mm height, 3.04mm length, and 1.4mm width in a SOT-23 surface-mount package. Operates from -55°C to 150°C with a maximum power dissipation of 1.3W. Includes 650pF input capacitance and fast switching times with 4.2ns turn-on delay and 9.1ns fall time. RoHS compliant.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 37 / Gate-Source Voltage V = 12 / Fall Time ns = 9.1 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 4.2 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3