価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | IRLML2402TRPBF | 600,000 | 3K | Tape & Reel | ||||||||
| Arrow Electronics | IRLML2402TRPBF | 3 | 1 | |||||||||
| RS (Formerly Allied Electronics) | IRLML2402TRPBF | 0 | 1 | Bulk | 2h | |||||||
| Farnell | IRLML2402TRPBF | 0 | 1 | Custom Reel | 20h | |||||||
| Sensible Micro | IRLML2402TRPBF | 6,609 | 2d |
CADモデル
製造元 Infineon IRLML2402TRPBF のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 Component Search Engine | シンボルフットプリント | 3D | ダウンロード |
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代替部品
Price @ 1000
$ 0.335
$ 0.52
$ 0.52
Stock
8,079,659
194,184
194,184
Authorized Distributors
4
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SC
SC
Drain to Source Voltage (Vdss)
20 V
20 V
20 V
Continuous Drain Current (ID)
760 mA
1.2 A
1.2 A
Threshold Voltage
700 mV
1.2 V
1.2 V
Rds On Max
250 mΩ
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
12 V
8 V
8 V
Power Dissipation
340 mW
500 mW
500 mW
Input Capacitance
110 pF
220 pF
220 pF
サプライチェーン
Country of OriginMainland China, Philippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1995-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-07-31
LTD Date2025-01-31
関連部品
InfineonIRLML6302TRPBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.6Ohm;ID -0.78A;Micro3;PD 540mW;VGS +/-12V
InfineonIRLML6244TRPBF
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
説明
Infineon IRLML2402TRPBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 20V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-12V
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 20 V 0.25 Ohm 2.6 nC HEXFET® Power Mosfet - MICRO-3
Transistor, MOSFETS, HEX/MOS N-Channel, 20V, 1.2A, SOT-23
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N, MICRO3; Transistor Polarity:N Channel; Continuous Drain Current Id:930mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:540mW; Transistor Case Style:µSOIC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.2A; Package / Case:Micro3; Power Dissipation Pd:540mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.2 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 250 / Gate-Source Voltage V = 12 / Fall Time ns = 4.8 / Rise Time ns = 9.5 / Turn-OFF Delay Time ns = 9.7 / Turn-ON Delay Time ns = 2.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 540
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:1.2A; Resistance, Rds On:0.25ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.4A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.54W; Power, Pd:0.54W; Quantity, Reel:3000; SMD Marking:1A; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:20V; Voltage, Vgs th Min:0.7V; Width, External:3.05mm; Width, Tape:8mm
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)760 mA
Current Rating1.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time4.8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance110 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation280 mW
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels1
Number of Elements1
On-State Resistance250 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation340 mW
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time9.5 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage700 mV
Turn-Off Delay Time9.7 ns
Turn-On Delay Time2.5 ns
Voltage Rating (DC)20 V
Dimensions
Height1.12 mm
Length3.0226 mm