サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-11-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
説明
Infineon IRFZ44ELPBFの詳細は販売業者から提供されます。
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 0.023Ohm;ID 48A;TO-262;PD 110W;VGS +/-20V
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:48A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
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技術仕様
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)48 A
Current Rating48 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance23 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance23 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation110 W
Rise Time60 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)60 V
Dimensions
Height9.652 mm
Length10.54 mm
Width4.69 mm