サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
説明
Infineon IRF5305LPBFの詳細は販売業者から提供されます。
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
P CHANNEL MOSFET, -55V, 31A, TO-262; Tra; P CHANNEL MOSFET, -55V, 31A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)31 A
Drain to Source Breakdown Voltage-55 V
Drain to Source Resistance60 mΩ
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
Power Dissipation110 W
Rds On Max60 mΩ
Resistance60 mΩ
Rise Time66 ns
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm