代替部品
Price @ 1000
$ 2.18
$ 1.036
$ 1.036
Stock
183,392
298,169
298,169
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
150 V
150 V
150 V
Continuous Drain Current (ID)
43 A
51 A
51 A
Threshold Voltage
-
-
-
Rds On Max
32 mΩ
32 mΩ
32 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
3.8 W
3.8 W
3.8 W
Input Capacitance
2.77 nF
2.77 nF
2.77 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
説明
Infineon IRFS52N15DTRRPの詳細は販売業者から提供されます。
Mosfet, Power; N-ch; Vdss 150V; Rds(on) 32MILLIOHMS; Id 51A; D2PAK; Pd 230W; Vgs +/-30
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 51A 3-Pin(2+Tab) D2PAK T/R
N Channel 150 V 51 A 32 mOhm Surface Mount Hexfet Power Mosfet - D2PAK
N CH POWER MOSFET, HEXFET, 150V, 51A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)43 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.77 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance32 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max32 mΩ
Rise Time47 ns
Schedule B8541290080
Turn-Off Delay Time28 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm