代替部品
Price @ 1000
$ 2.58
$ 2.58
Stock
17,335
122,447
122,447
Authorized Distributors
0
1
1
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-252-3
TO-252-3
Drain to Source Voltage (Vds)
40 V
40 V
40 V
Continuous Drain Current (ID)
195 A
195 A
195 A
Threshold Voltage
4 V
-
-
Rds On Max
1.75 mΩ
1.75 mΩ
1.75 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
380 W
380 W
380 W
Input Capacitance
9.2 nF
9.2 nF
9.2 nF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-26
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2016-11-16
LTD Date2017-05-16
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説明
Infineon IRFS3004PBFの詳細は販売業者から提供されます。
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 340A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 40V, 340A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:340A; Driver Case Style:D2-PAK; Package / Case:D2-PAK; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.75 mΩ
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.75 mΩ
Package Quantity1000
Power Dissipation380 W
Rds On Max1.75 mΩ
Rise Time220 ns
Threshold Voltage4 V
Turn-Off Delay Time90 ns
Turn-On Delay Time23 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm