Infineon IRFR220NTRPBF

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W

Single N-Channel 200 V 600 mOhm 15 nC HEXFET® Power Mosfet - TO-252AA

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:43W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFR220NTRPBF.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 43