Infineon IRFR220NTRLPBF

Name: Infineon IRFR220NTRLPBF
Brand: Infineon
SKU: IRFR220NTRLPBF

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 600 Milliohms; ID 5A; D-Pak (TO-252AA); PD 43W

$ 0.388

Obsolete

メーカーページデータシート

価格と在庫

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRFR220NTRLPBF	11,530					0.433	0.360	0.321	15h
Arrow Electronics		IRFR220NTRLPBF	3,239	1		0.738	0.563	0.451	0.388	0.388
RS (Formerly Allied Electronics)		IRFR220NTRLPBF	0	3K	Bulk					1.000	4h
Farnell	3	IRFR220NTRLPBF	0	5	Cut Tape		1.020*	0.552*	0.468*	0.430*	15h
Mouser		942-IRFR220NTRLPBF	389	1	Tape & Reel	1.780	1.100	0.724	0.475	0.395

在庫履歴

3か月間の傾向 : -4.44%

CADモデル

シンボル、フットプリント、3D STEPをダウンロード

代替部品

1点の部品が利用可能

データシート & ドキュメント

Infineon IRFR220NTRLPBFのデータシートとメーカー資料をダウンロードする。

IHS

Datasheet11ページ21年前

Newark

RS (Formerly Allied Electronics)

在庫履歴

3か月間の傾向:

-4.44%

代替部品

部品

代替部品

InfineonIRFR220NTRLPBF

InfineonIRFR220NTRPBF

Price @ 1000

$ 0.388

$ 0.449

Stock

326,986

1,377,188

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

200 V

Continuous Drain Current (ID)

5 A

Threshold Voltage

4 V

Rds On Max

600 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

43 W

Input Capacitance

300 pF

サプライチェーン

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-02

Lifecycle StatusObsolete (Last Updated: 4 months ago)

説明

Infineon IRFR220NTRLPBFの詳細は販売業者から提供されます。

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 600 Milliohms;ID 5A;D-Pak (TO-252AA);PD 43W

RS (Formerly Allied Electronics)

Single N-Channel 200 V 600 mOhm 23 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

SMPS MOSFET Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):600mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 11 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 6.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 43

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