価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7451PBF | 0 | 665 | Bulk | 3h | |||||||
| Avnet | IRF7451PBF | 0 | 3800 | 1d | ||||||||
| Farnell | IRF7451PBF | 0 | 1 | 9h | ||||||||
| Microchip USA | IRF7451PBF | 2,141 | 3K | Tube | 4h | |||||||
| Win Source | WS-IRF7451PBF | 125,700 | 90 | 11h |
代替部品
Price @ 1000
$ 0.62
$ 0.549
Stock
452,332
949,753
Authorized Distributors
3
6
Mount
Surface Mount
Surface Mount
Case/Package
SO
SO
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
3.6 A
3.6 A
Threshold Voltage
5.5 V
-
Rds On Max
-
90 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
990 pF
990 pF
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
InfineonIRF7451TRPBF
Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) | MOSFET N-CH 150V 3.6A 8-SOIC
VishaySI4848DY-T1-E3
Power MOSFET, N Channel, 150 V, 2.7 A, 85 MilliOhms, NSOIC, 8 Pins, Surface Mount
説明
Infineon IRF7451PBFの詳細は販売業者から提供されます。
INFINEON IRF7451PBF MOSFET Transistor, N Channel, 3.6 A, 150 V, 90 mohm, 10 V, 5.5 V
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
SMPS HEXFET POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:3.6A; Resistance, Rds On:0.09ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:29A; Pin Configuration:(1+2+3)S,4G, (8+7+6+5)D; Power, Pd:2.5W; Time, Fall:15ns; Time, Rise:4.2ns; Transistors, No. of:1; Voltage, Vds Max:150V; Voltage, Vgs Max:30V
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)3.6 A
Current Rating3.6 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance990 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Elements1
On-State Resistance90 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rise Time4.2 ns
TerminationSMD/SMT
Threshold Voltage5.5 V
Turn-Off Delay Time17 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)150 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
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