Infineon IRF5800TRPBFの詳細は販売業者から提供されます。
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.085Ohm;ID -4A;TSOP-6;PD 2W;VGS +/-20V;-55
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Power Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):85mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TSOP-6 ;RoHS Compliant: Yes
MOSFET, N, 30V, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-30V; Current, Id Cont:4A; Resistance, Rds On:0.085ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-1V; Case Style:TSOP; Termination Type:SMD; Application Code:LowR; Current, Id Cont @ 25°C:4A; Current, Id Cont @ 70°C:3.2; Current, Idm Pulse:32A; Power, Pd:2W; Thermal Resistance, Junction to Case A:62.5°C/W; Voltage, Rds Measurement:10V; Voltage, Vds:30V; Voltage, Vds Max:30V