価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | ZXMN3A03E6TA | 3,000 | 3K | |||||||||
| Verical | ZXMN3A03E6TA | 3,000 | 3K | |||||||||
| DigiKey | 31-ZXMN3A03E6TACT-ND | 5,767 | 1 | Cut Tape | ||||||||
| TME | ZXMN3A03E6TA | 0 | 1 | 3h | ||||||||
| Avnet | ZXMN3A03E6TA | 0 | 3K | 4d |
サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-24
Lifecycle StatusProduction (Last Updated: 4 months ago)
関連部品
Diodes Inc.DMP3065LVT-7
DMP Series 30 V 42 mOhm 1.6 W SMT P-Channel Enhancement Mode Mosfet - TSOT-26
onsemiCPH6341-TL-W
P-Channel Power Mosfet, -30V, -5A, 59M/Reel Rohs Compliant: Yes |Onsemi CPH6341-TL-W
Diodes Inc.DMN3135LVT-7
Mosfet Bvdss: 25V~30V Tsot26 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMN3135LVT-7
説明
Diodes Inc. ZXMN3A03E6TAの詳細は販売業者から提供されます。
ZXMN3A3E6 Series 30 V 0.05 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-6
Trans MOSFET N-CH 30V 4.6A Automotive 6-Pin SOT-23 T/R
N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
MOSFET N-CHANNEL 30V 4.6A SOT23-6
DiodesZetex NMOS, Vds=30 V, 4.6 A, SOT-23, , 6
Small Signal Field-Effect Transistor, 3.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs 30V 1.1W SMT SOT26 4.6A N-Channel
メーカーの別名
Diodes Inc.は世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Diodes Inc. は以下の名前でも知られているかもしれません：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技術仕様
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight14.996898 mg
Technical
Continuous Drain Current (ID)3.7 A
Current Rating4.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time6.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance600 pF
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max50 mΩ
Resistance50 mΩ
Rise Time6.4 ns
Schedule B8541290080
Turn-Off Delay Time16 ns
Turn-On Delay Time2.9 ns
Voltage Rating (DC)30 V
Dimensions
Height1.3 mm
Length3.1 mm
Width1.8 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
準拠ステートメント