Infineon IRF540NSPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20

Trans MOSFET N-CH Si 100V 33A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 100V 33A D2PAK

MOSFET N-CH 100V 33A D2PAK N-Channel 100 V 33A (Tc) 130W (Tc) Surface Mount D2PAK

IRF540NSPBF Series 100 V 44 mOhm 33 A SMT HEXFET® Power MOSFET - D2PAK-3

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 3.8 W

HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):44mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: Yes

MOSFET, N, 100V, 33A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:33A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:110A; SMD Marking:IRF540NS; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V